Description
Sheet 2 Rev.2.0,2020-08-10 OptiMOSª3Power-MOSFET,30V BSC025N03LSG 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) ID Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Reversediodedv/dt Gate source voltage Power dissipation Operating and storage temperature ID,pulse IAS EAS dv/dt VGS Ptot Tj,Tstg Min. 147 - 93 - 122 - 77 - 25 - 588 - 50 - 135 - 6 - 20 - 83 - 2.5 - 150 Unit Note/TestCondition VGS=10V,TC=25°C VGS=10V,TC=100°C A VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W2) A TC=25°C A TC=25°C mJ ID=50A,RGS=25Ω kV/µs ID=50A,VDS=24V,di/dt=200A/µs, Tj,max=150°C V- - TC=25°C TA=25°C,RthJA=50K/W2) °C IEC climatic category; DIN IEC 68-1: 55/150/56 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol - case, bottom - case, top Device on PCB, 6 cm2 cooling area2) RthJC RthJC RthJA Values Unit Note/TestCondition Min.
Key Features
- FastswitchingMOSFETforSMPS
- OptimizedtechnologyforDC/DCconverters
- QualifiedaccordingtoJEDEC1)fortargetapplications
- N-channel;Logiclevel
- ExcellentgatechargexRDS(on)product(FOM)
- Verylowon-resistanceRDS(on)
- Superiorthermalresistance
- Avalancherated
- Pb-freeplating;RoHScompliant
