017N10N5 Datasheet Text
IPB017N10N5
MOSFET
OptiMOSª5Power-Transistor,100V
Features
- Idealforhighfrequencyswitchingandsync.rec.
- ExcellentgatechargexRDS(on)product(FOM)
- Verylowon-resistanceRDS(on)
- N-channel,normallevel
- 100%avalanchetested
- Pb-freeplating;RoHSpliant
- Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
100
V
RDS(on),max
1.7 mΩ
ID
273
A
Qoss
213 nC
QG(0V..10V)
168 nC
D²-PAK7pin tab 1...