BD302 - Silicon PNP Power Transistor

Inchange Semiconductor Company Limited

General Description

DC Current Gain - : hFE = 30(Min.)@ IC= -3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min.) Complement to Type BD301 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages up to 25W, verti

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Datasheet Details

Part number	BD302
Manufacturer	Inchange Semiconductor Company Limited
File Size	210.63 KB
Description	Silicon PNP Power Transistor
Datasheet	BD302 Datasheet

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isc Silicon PNP Power Transistor BD302 DESCRIPTION ·DC Current Gain - : hFE = 30(Min.)@ IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min.) ·Complement to Type BD301 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages up to 25W, vertical deflection circuits in color TV receivers.