2SB1340 transistor equivalent, silicon pnp darlington power transistor.
*Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
*High DC Current Gain-
: hFE= 2000(Min)@ (VCE= -3V, IC= -2A)
*Complement to Type 2SD1889
APPLICATIONS
*Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(.
Image gallery
TAGS
Download (Size : 214.31KB)