Download 2SA1216 Datasheet PDF
Inchange Semiconductor
2SA1216
DESCRIPTION - High Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V(Min) - Good Linearity of h FE - plement to Type 2SC2922 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 VCEO Collector-Emitter Voltage -180 VEBO Emitter-Base Voltage -5 Collector Current-Continuous -17 Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature -5 ℃ Tstg Storage Temperature...