2SA1216 Description
·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·plement to Type 2SC2922 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1216 TC=25℃ unless otherwise specified SYMBOL PARAMETER...