2SD1832 transistor equivalent, silicon npn darlington power transistor.
*Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALU.
*High Collector Current:: IC= 5A
*Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@IC= 3A
*Wide Area of Safe Operation
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Desig.
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