2SD1105 transistor equivalent, silicon npn power transistor.
*Designed for high power AF amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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PARAMETER
MAX
UNIT
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*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min)
*Wide Area of Safe Operation
*High Power and High Reliability
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed f.
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