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TIP35E - Silicon NPN Power Transistor

General Description

DC Current Gain- : hFE= 25(Min)@IC = 1.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 140V(Min) Complement to Type TIP36E Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= 1.0A Minimum Lot-to-Lot variations for robust device performance and reliable operation APP

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 140V(Min) ·Complement to Type TIP36E ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= 1.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.