TIP35E - Silicon NPN Power Transistor

Datasheet Summary

Description

DC Current Gain- : hFE= 25(Min)@IC = 1.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 140V(Min) Complement to Type TIP36E Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= 1.0A Minimum Lot-to-Lot variations for robust device performance and reliable operation APP

Inchange Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	TIP35E
Manufacturer	Inchange Semiconductor
File Size	219.62 KB
Description	Silicon NPN Power Transistor
Datasheet	TIP35E Datasheet
Additional preview pages of the TIP35E datasheet.

📁 Similar Datasheet

TIP35E - Silicon NPN Transistor (NTE)
TIP35 - Complementary Silicon Power Transistor (nELL)
TIP35 - NPN SILICON POWER TRANSISTORS (BOURNS)
TIP35 - Complementary Silicon Power Transistors (Central Semiconductor)
TIP35 - SILICON POWER TRANSISTOR (SavantIC)
TIP35 - Silicon Power Transistors (Comset Semiconductors)
TIP35 - NPN Transistor (INCHANGE)
TIP3526 - Infrared Touch Panels (Vishay Intertechnology)
TIP35A - Complementary Silicon Power Transistor (nELL)
TIP35A - NPN SILICON POWER TRANSISTORS (BOURNS)

Other Datasheets by Inchange Semiconductor

TIP35CF - Silicon NPN Power Transistor
TIP35F - Silicon NPN Power Transistor
TIP3055T - Silicon NPN Power Transistor
TIP30D - Silicon PNP Power Transistor
TIP36CF - Silicon PNP Power Transistor
TIP122 - Silicon NPN Darlington Power Transistor
TIP122FP - Silicon NPN Power Transistor
TIP127 - Silicon PNP Darlington Power Transistor

Full PDF Text Transcription

Click to expand full text

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 140V(Min) ·Complement to Type TIP36E ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= 1.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.

Published: Nov 6, 2016 |