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TIP3055T - Silicon NPN Power Transistor

Description

Excellent Safe Operating Area DC Current Gain- : hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC = 4A Complement to Type TIP2955T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC = 4A ·Complement to Type TIP2955T ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications.
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