PMD1601K transistor equivalent, silicon npn darlingtion power transistor.
*Designed for general purpose amplifier and low frequency switching applications
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
S.
*High DC current gain
*Collector-Emitter Breakdown VoltageV(BR)CEO= 60V(Min)
*Complement to type PMD1701K
APPLICATIONS
*Designed for general purpose amplifier and low frequency switching applications
ABSOLUTE MAXIMUM RATINGS(TC=25℃).
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