NJW0281G transistor equivalent, silicon npn power transistor.
*Designed for high fidelity audio amplifier and
other linear applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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*High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=250V(Min)
*Good Linearity of hFE
*Complement to Type NJW0302G
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for hig.
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