Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.3V(Max)( IC= 1A; IB= 50mA)
DC Current Gain -hFE = 120(Min)@ IC= 0.5A
High Current-Gain
Bandwidth Product
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed
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isc Silicon NPN Power Transistor
NJD2873
DESCRIPTION ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.3V(Max)( IC= 1A; IB= 50mA) ·DC Current Gain -hFE = 120(Min)@ IC= 0.5A ·High Current-Gain—Bandwidth Product ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high-gain audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
50
V
VCEO Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current
Total Power Dissipation
PC
@ TC=25℃ Collector Power Dissipation
Ta=25℃
TJ
Junction Temperature
2
A
3
A
0.4
A
15 W
1.
NJD2873 Datasheet
