NJD2873 transistor equivalent, silicon npn power transistor.
*Designed for high-gain audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
U.
*Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.3V(Max)( IC= 1A; IB= 50mA)
*DC Current Gain -hFE = 120(Min)@ IC= 0.5A
*High Current-Gain—Bandwidth Product
*Minimum Lot-to-Lot variations for robust device
performance and relia.
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