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MMBR571L - Silicon NPN RF Transistor

Description

Low Noise

fT = 8.0 GHz TYP.

GNF = 16.5 dB TYP.

amplifiers and low-noise VCO’S.

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INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR571L DESCRIPTION ·Low Noise ·High Current-Gain Bandwidth Product fT = 8.0 GHz TYP. @ IC= 50 mA ·High Gain GNF = 16.5 dB TYP. @ IC= 10mA, f = 0.5 GHz APPLICATIONS ·Designed for low noise , wide dynamic range front-end amplifiers and low-noise VCO’S. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC= 75℃ TJ Junction Temperature Tstg Storage Temperature Range 3V 80 mA 0.33 W 150 ℃ -55~150 ℃ isc website:www.iscsemi.
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