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MJH16012 - Silicon NPN Power Transistor

Description

Collector-Emitter Voltage- : VCEO(SUS)= 450V(Min) Fast Turn-Off Time APPLICATIONS Designed for high-voltage, high-speed applications as: Switching Regulators Inverters Relay Drivers Deflection Circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCEV

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INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Voltage- : VCEO(SUS)= 450V(Min) ·Fast Turn-Off Time APPLICATIONS Designed for high-voltage, high-speed applications as: ·Switching Regulators ·Inverters ·Relay Drivers ·Deflection Circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCEV Collector-Emitter Voltage 850 VCEO(SUS) Collector-Emitter Voltage 450 VEBO Emitter-Base Voltage 6 IC Collector Current-Continuous 15 ICM Collector Current-Peak 20 IB Base Current-Continuous 10 IBM Base Current-Peak 15 UNIT V V V A A A A PC Collector Power Dissipation @TC=25℃ 135 W Tj Junction Temperature Tstg Storage Temperature Range 150 -55~150 ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R(th)j-c Thermal Resistanc