MJH11017 transistor equivalent, silicon pnp darlington power transistor.
*Designed for general purpose amplifiers ,low frequency
switching and motor control applications.
ABSOLUTE MAXIMUM .
*High DC Current Gain-
: hFE = 400(Min)@ IC= -10A
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -150V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.5V(Max)@ IC= -10A = -4.0V(Max)@ IC= -15A
*Complement to Type .
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