MJE8501 transistor equivalent, silicon npn power transistor.
*Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are .
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 800V(Min)
*High Switching Speed
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for high-voltage ,high-speed, power switc.
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