MJE340 transistor equivalent, silicon npn power transistor.
*Designed for high voltage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
V.
*Collector
–Emitter Sustaining Voltage-
: VCEO(SUS) = 300 V(Min)
*DC Current Gain-
: hFE = 100(Min) @ IC= 50mA
*Low Collector Saturation Voltage-
: VCE(sat) = 1.0V(Max.)@ IC= 50mA
*Complement to the PNP MJE350
*Mini.
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