MJE200 transistor equivalent, silicon npn power transistor.
*Designed for low voltage,low-power,high-gain audio
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBO.
*Collector
–Emitter Sustaining Voltage-
: VCEO(SUS) = 25V(Min)
*DC Current Gain-
: hFE = 70(Min) @ IC= 500mA
*Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.3V(Max)@ IC = 500mA
*High Current-Gain—Bandwidth Prod.
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