MJE13005F transistor equivalent, silicon npn power transistor.
*Designed for use in high-voltage, high-speed, power swit-
ching in inductive circuit, they are particularly suited .
*Collector
–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
*Collector Saturation Voltage
: VCE(sat) = 0.6(Max) @ IC= 2.0A
*Switching Time
: tf= 0.9μs(Max.)@ IC= 2.0A
APPLICATIONS
*Designed for use in high-voltage, .
Image gallery
TAGS
Download