MJE13005 transistors equivalent, silicon npn power transistors.
*Designed for use in high-voltage, high-speed, power swit-
ching in inductive circuit, they are particularly suited .
*Collector
–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
*Collector Saturation Voltage
: VCE(sat) = 0.6(Max) @ IC= 2.0A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATION.
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