Collector
Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min)
High DC Current Gain-
: hFE = 500(Min)@IC= 2A
Minimum Lot-to-Lot variations for robust device performance
and reliable operation APPLICATIONS
Designed for general purpose switching and amplifier
applications ABSO
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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector–Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min) ·High DC Current Gain-
: hFE = 500(Min)@IC= 2A ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation APPLICATIONS ·Designed for general purpose switching and amplifier
applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
8
A
IB
Base Current
Collector Power Dssipation
TC=25℃
PC
Collector Power Dissipation
Ta=25℃
TJ
Junction Temperature
0.1
A
20 W
1.
MJD6039 Datasheet
