MJD6039 transistor equivalent, silicon npn power transistor.
*Designed for general purpose switching and amplifier
applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMET.
*Collector
–Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min)
*High DC Current Gain-
: hFE = 500(Min)@IC= 2A
*Minimum Lot-to-Lot variations for robust device performance
and reliable operation APPLICATIONS
*Designed for.
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