MJD47 Datasheet (PDF) Download
Inchange Semiconductor
MJD47

Description

DC Current Gain -hFE = 30~150@ IC= 0.3A - Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for line operated audio output amplifier,switchmode power supply drivers and other switching applications SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.0 A ICM Collector Current-Peak 2.0 A IB Base Current Collector Power Dissipation TC=25℃ PD Collector Power Dissipation Ta=25℃ Tj Junction Temperature 0.6 A 15 W 1.56 150 ℃ Tstg Storage Temperature Range -65~150 ℃ SYMBOL PARAMETER Rth j-c Rth j-a MAX 8.33 80 UNIT ℃/W ℃/W isc website: .iscsemi.