MJD45H11 transistor equivalent, silicon pnp power transistor.
*Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
*Designed for g.
*Low Collector-Emitter Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC = 8A
*Fast Switching Speeds
*Complement to Type MJD44H11
*DPAK for Surface Mount Applications
*Minimum Lot-to-Lot variations for robust device performance
and rel.
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