DC Current Gain -hFE = 25(Min)@ IC= 1A - Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) - plement to Type MJD32C - DPAK for Surface Mount Applications - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part Number | Manufacturer | Description |
|---|---|---|
| MJD31CUQ | Diodes Incorporated | 100V NPN HIGH VOLTAGE TRANSISTOR |
| MJD31C | Kexin Semiconductor | Complementary Power Transistors |
| MJD31C | onsemi | SILICON POWER TRANSISTORS |
| MJD31C | STMicroelectronics | Low voltage NPN power transistor |
| MJD31C | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor |
| MJD31C | Motorola Semiconductor | SILICON POWER TRANSISTORS |
| MJD31C | Galaxy Microelectronics | Epitaxial Planar NPN Transistor |
| MJD31C | Taitron Components | SMD Power Transistor |
| MJD31CT4-A | STMicroelectronics | Low voltage NPN power transistor |
| MJD31 | Kexin Semiconductor | Complementary Power Transistors |
