DC Current Gain -hFE = 25(Min)@ IC= 1A
Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 100V(Min)
Complement to Type MJD32C
DPAK for Surface Mount Applications
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
Designed for
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isc Silicon NPN Power Transistors
DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 100V(Min) ·Complement to Type MJD32C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for use in general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO VCEO VEBO
IC ICM IB
PC
Tj
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Base Current Collector Power Dissipation TC=25℃ Collector Power Dissipation Ta=25℃ Junction Temperature
100
V
100
V
5
V
3
A
5
A
1
A
15 W
1.
MJD31C Datasheet
