MJD31C transistor equivalent, silicon npn power transistor.
*Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
*Designed for .
*DC Current Gain -hFE = 25(Min)@ IC= 1A
*Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 100V(Min)
*Complement to Type MJD32C
*DPAK for Surface Mount Applications
*Minimum Lot-to-Lot variations for robust device performance
and .
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