MJD3055 transistor equivalent, silicon npn power transistor.
*Minimum Lot-to-Lot variations for robust device performance
and reliable operation APPLICATIONS
*Designed for u.
*Excellent Safe Operating Area
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A
*Complement to Type MJD2955
*DPAK for Surface Mount Applications
*Minimum Lot-to-Lot variations for robust device performance
an.
Image gallery
TAGS
Download (Size : 251.77KB)