MJD253
MJD253 is Silicon PNP Power Transistor manufactured by Inchange Semiconductor.
isc Silicon PNP Power Transistor
DESCRIPTION
- High DC Current Gain-
: hFE = 40(Min) @ IC= -0.2 A
- Low Collector Saturation Voltage-
: VCE(sat) = -0.3V(Max.)@ IC= -0.5 A
- plement to the NPN MJD243
- Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
- Designed for low voltage, low -power ,high-gain audio amplifier...
