Datasheet Details
| Part number | MJD253 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 243.96 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet |
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| Part number | MJD253 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 243.96 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet |
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·High DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·Complement to the NPN MJD243 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low voltage, low -power ,high-gain audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -8 A IB Base Current Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ Ti Junction Temperature -1 A 1.4 W 12.5 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 10 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 89.3 ℃/W MJD253 isc Website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJD253 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA;
IB= 0 -100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5 A ;IB= -50mA -0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1A ;IB= -0.1A -0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= -2A ;IB= -0.2A -1.8 V VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= -0.5A;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJD253 | Complementary Silicon Plastic Power Transistor | ON |
| Part Number | Description |
|---|---|
| MJD210 | Silicon PNP Power Transistor |
| MJD243 | Silicon NPN Power Transistor |
| MJD2955 | Silicon PNP Power Transistor |
| MJD112 | Silicon NPN Power Transistor |
| MJD117 | Silicon PNP Power Transistor |
| MJD122 | Silicon NPN Darlington Power Transistor |
| MJD127 | Silicon PNP Darlington Power Transistor |
| MJD128 | Silicon PNP Darlington Power Transistor |
| MJD148 | Silicon NPN Power Transistor |
| MJD3055 | Silicon NPN Power Transistor |