| Part number | MJD253 |
|---|---|
| Datasheet | MJD253-InchangeSemiconductor.pdf |
| File Size | 243.96 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
|
|
hFE = 40(Min) @ IC= -0.2 A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·plement to the NPN MJD243 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low voltage, low -power ,high-gain audio amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJD253 TC =25℃ unless otherwise specified...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MJD253 | Complementary Silicon Plastic Power Transistor | ON |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| MJD210 | Silicon PNP Power Transistor |
| MJD243 | Silicon NPN Power Transistor |
| MJD2955 | Silicon PNP Power Transistor |
| MJD112 | Silicon NPN Power Transistor |
| MJD117 | Silicon PNP Power Transistor |
| MJD122 | Silicon NPN Darlington Power Transistor |
| MJD127 | Silicon PNP Darlington Power Transistor |
| MJD128 | Silicon PNP Darlington Power Transistor |
| MJD148 | Silicon NPN Power Transistor |
| MJD3055 | Silicon NPN Power Transistor |
