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MJD253 - Silicon PNP Power Transistor

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Datasheet Details

Part number MJD253
Manufacturer Inchange Semiconductor
File Size 243.96 KB
Description Silicon PNP Power Transistor
Datasheet download datasheet MJD253-InchangeSemiconductor.pdf

MJD253 Product details

Description

High DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A Complement to the NPN MJD243 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage, low -power ,high-gain audio amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VE

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