MJD253 Overview
hFE = 40(Min) @ IC= -0.2 A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·plement to the NPN MJD243 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low voltage, low -power ,high-gain audio amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJD253 TC =25℃ unless otherwise specified...
