Datasheet4U Logo Datasheet4U.com

MJD253 - Silicon PNP Power Transistor

Datasheet Summary

Description

High DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A Complement to the NPN MJD243 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage, lo

📥 Download Datasheet

Datasheet preview – MJD253

Datasheet Details

Part number MJD253
Manufacturer Inchange Semiconductor
File Size 243.96 KB
Description Silicon PNP Power Transistor
Datasheet download datasheet MJD253 Datasheet
Additional preview pages of the MJD253 datasheet.

📁 Similar Datasheet

  • MJD253 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
  • MJD253 - Complementary Silicon Plastic Power Transistor (ON)
  • MJD20 - P-channel power MOSFET (Sanken)
  • MJD200 - NPN Transistor (INCHANGE)
  • MJD200 - Complementary Plastic Power Transistors (ON)
  • MJD200 - D-PAK (Fairchild)
  • MJD200 - SILICON POWER TRANSISTORS (Motorola)
  • MJD210 - PNP Transistor (Fairchild)
  • MJD210 - Complementary Plastic Power Transistors (ON)
  • MJD210 - SILICON POWER TRANSISTORS (Motorola)
Other Datasheets by Inchange Semiconductor
  • MJD210 - Silicon PNP Power Transistor
  • MJD243 - Silicon NPN Power Transistor
  • MJD2955 - Silicon PNP Power Transistor
  • MJD112 - Silicon NPN Power Transistor
  • MJD117 - Silicon PNP Power Transistor
  • MJD122 - Silicon NPN Darlington Power Transistor
  • MJD127 - Silicon PNP Darlington Power Transistor
  • MJD128 - Silicon PNP Darlington Power Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·Complement to the NPN MJD243 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low voltage, low -power ,high-gain audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -8 A IB Base Current Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ Ti Junction Temperature -1 A 1.4 W 12.
Published: |