MJD243 transistor equivalent, silicon npn power transistor.
*Designed for low power audio amplifier and low-current,
high-speed switching applications.
ABSOLUTE MAXIMUM RATING.
*DC Current Gain-
: hFE = 40(Min) @ IC= 0.2 A
*Low Collector Saturation Voltage-
: VCE(sat) = 0.3V(Max.)@ IC= 0.5 A
*Complement to the PNP MJD253
*Minimum Lot-to-Lot variations for robust device performance
and reliable operation
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