MJD210 transistor equivalent, silicon pnp power transistor.
*Designed for low voltage, low -power ,high-gain audio
amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYM.
*High DC Current Gain-
: hFE = 70(Min) @ IC= -0.5A
*Low Collector Saturation Voltage-
: VCE(sat) = -0.3V(Max.)@ IC= -0.5 A
*Complement to the NPN MJD200
*Minimum Lot-to-Lot variations for robust device performance
and reliable operati.
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