MJD122 transistor equivalent, silicon npn darlington power transistor.
*Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYM.
*High DC current gain
*Built-in a damper diode at E-C
*Monolithic Construction With Built-in Base-Emitter Shunt Resistors
*Complementary Pairs Simplifies Designs
*Minimum Lot-to-Lot variations for robust device
performance and rel.
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