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MJ4031 - Silicon PNP Darlingtion Power Transistor

Description

With TO-3 packaging Very high DC current gain Monolithic darlington transistor with integrated antiparallel collector-emitter diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ignition Alternator regulator

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJ4031 DESCRIPTION ·With TO-3 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ignition ·Alternator regulator ·Motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PD Tj Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Max.Collector Current-Continuous Base Current- Continuous Collector Power Dissipation Max.Junction Temperature -80 V -80 V -5 V -15 A -20 A -0.
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