KTD998 transistors equivalent, silicon npn power transistors.
*High power amplifier applications
*Recommend for 45-50W audio frequency amplifier
output stage applications
AB.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
*Good Linearity of hFE
*Complement to Type KTB778
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*High power amplifier a.
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