KTD718 - Silicon NPN Power Transistors

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Good Linearity of hFE Complement to Type KTB688 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications Recommend for 45-50W a

Inchange Semiconductor

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Datasheet Details

Part number	KTD718
Manufacturer	Inchange Semiconductor
File Size	217.63 KB
Description	Silicon NPN Power Transistors
Datasheet	KTD718 Datasheet
Additional preview pages of the KTD718 datasheet.

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isc Silicon NPN Power Transistor INCHANGE Semiconductor KTD718 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type KTB688 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ·Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：

Published: Nov 14, 2016 |