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Inchange Semiconductor

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KTD718 Datasheet

Silicon NPN Power Transistors

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·Good Linearity of hFE
·Complement to Type KTB688
APPLICATIONS
·Audio frequency power amplifier applications
·Recommend for 45-50W audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120 V
VCEO
Collector-Emitter Voltage
120 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
10
A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
1A
80 W
150
Tstg Storage Temperature Range -55~150
isc Product Specification
KTD718
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

KTD718 Datasheet Preview

KTD718 Datasheet

Silicon NPN Power Transistors

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KTD718
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
120
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 6.0A; IB= 0.6A
2.5 V
VBE(on)
Base-Emitter On Voltage
ICBO Collector Cutoff Current
IC= 5A ; VCE= 5V
VCB= 120V ; IE= 0
1.5 V
10 μA
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
10 μA
hFE DC Current Gain
IC= 1A ; VCE= 5V
55 160
COB Output Capacitance
IE= 0; VCB= 10V;ftest= 1.0MHz
280 pF
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
10 MHz
hFE Classifications
RO
55-110 80-160
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number KTD718
Description Silicon NPN Power Transistors
Maker Inchange Semiconductor
Total Page 2 Pages
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