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Inchange Semiconductor

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KTD718 Datasheet

Silicon NPN Power Transistors

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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
KTD718
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·Good Linearity of hFE
·Complement to Type KTB688
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Audio frequency power amplifier applications
·Recommend for 45-50W audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
1
A
80
W
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

KTD718 Datasheet Preview

KTD718 Datasheet

Silicon NPN Power Transistors

No Preview Available !

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
KTD718
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6.0A; IB= 0.6A
VBE(on)
Base-Emitter On Voltage
IC= 5A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 120V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 1A ; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V;ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
MIN TYP. MAX UNIT
120
V
2.5
V
1.5
V
10 μA
10 μA
55
160
280
pF
10
MHz
hFE Classifications
R
O
55-110 80-160
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number KTD718
Description Silicon NPN Power Transistors
Maker Inchange Semiconductor
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