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KTC5103L - Silicon NPN Power Transistors

Description

High Collector Current-IC= 5A Good Linearity of hFE Low Saturation Voltage Complement to Type KTA1385L APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collect

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KTC5103L DESCRIPTION ·High Collector Current-IC= 5A ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type KTA1385L APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 5 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 8A 15 W 1.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.
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