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KTB778 - Silicon PNP Power Transistors

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) Good Linearity of hFE Complement to Type KTD998 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications Recommend for 45-50W audio freq

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type KTD998 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplifier applications ·Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KTB778 isc website：www.iscsemi.
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