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KTB778 - Silicon PNP Power Transistors

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Part number KTB778
Manufacturer Inchange Semiconductor
File Size 225.92 KB
Description Silicon PNP Power Transistors
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) Good Linearity of hFE Complement to Type KTD998 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emit

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