KTB778
KTB778 is Silicon PNP Power Transistors manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
- Good Linearity of h FE
- plement to Type KTD998
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- High power amplifier applications
- Remend for 45-50W audio frequency amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
VCEO
Collector-Emitter Voltage
-120
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-10
Base Current-Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
-1
℃
Tstg...
