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KTB2510 - Silicon PNP Power Transistors

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max) @IC= -7A High DC Current Gain : hFE= 5000(Min) @ IC= -7A, VCE= -4V Complement to Type KTD1510 APPLICATIONS High power amplifier applications Recomme

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INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification KTB2510 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.
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