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KTB1366 Silicon PNP Power Transistors

KTB1366 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). Collector Power Dissipation- : PC= 25 W@ TC= 25℃. Low Collector Saturation Vo.

KTB1366 Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A IB Base Current-Continuous C

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Datasheet Details

Part number
KTB1366
Manufacturer
Inchange Semiconductor
File Size
214.58 KB
Datasheet
KTB1366-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistors

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Silicon PNP Power Transistors Inchange Semiconductor
Inchange Semiconductor KTB1366-like datasheet