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KTA1659A - Silicon PNP Power Transistors

Description

High Collector-Emitter Breakdown Voltage VCEO= -180V(Min) Complement to Type KTC4370A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALU

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= -180V(Min) ·Complement to Type KTC4370A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5.0 V IC(DC) Collector Current(DC) -1.5 A IB(DC) PC TJ Base Current Collector Power Dissipation @TC=25℃ Junction Temperature -0.15 A 20 W 150 ℃ Tstg Storage Temperature -55~150 ℃ KTA1659A isc website： www.iscsemi.
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