IRFZ34N transistor equivalent, n-channel mosfet transistor.
*Advanced Process Technology
*Dynamic dv/dt Rating
*175°C Operating Temperature
*Fast Switching
*Fully Avalanche Rated
DESCRIPTION
*Designed for .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
I.
*Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current.
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