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IRFS610A - N-Channel MOSFET

Description

purpose applications.

Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS610A FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±30 V V ID Drain Current-Continuous 2.5 A IDM Drain Current-Single Pluse 10 A PD Total Dissipation @TC=25℃ 22 W TJ Max.
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