IRFP350 - N-Channel MOSFET Transistor

Product Overview

Inchange Semiconductor

Datasheet Details

Part number	IRFP350
Manufacturer	Inchange Semiconductor
File Size	237.57 KB
Description	N-Channel MOSFET Transistor
Datasheet	IRFP350 Datasheet
Additional preview pages of the IRFP350 datasheet.

Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 400 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 16 A IDM Drain Current-Single Pluse 64 A PD Total Dissipation @TC=25℃ 180 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal R

Features

Drain Current.
ID= 16A@ TC=25℃.
Drain Source Voltage- : VDSS= 400V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max).
Fast Switching.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Aug 8, 2016 |