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IRFP257 Inchange Semiconductor N-Channel MOSFET Transistor

Description ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 275 V ±20 V 21 A 84...
Features
·Drain Current
  –ID= 21A@ TC=25℃
·Drain Source Voltage- : VDSS= 275V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.17Ω(Max)
·Fast Switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·Designed for use in switch mode power supplies and general purpose applications. ...

Datasheet PDF File IRFP257 Datasheet - 236.86KB

IRFP257  






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