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Inchange Semiconductor

IRFP250N Datasheet Preview

IRFP250N Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP250N
FEATURES
·Drain Current ID= 30A@ TC=25
·Drain Source Voltage-
: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.075Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Pluse
PD Total Dissipation @TC=25
TJ Max. Operating Junction Temperature
Tstg Storage Temperature
VALUE UNIT
200 V
±20
V
30 A
120 A
214 W
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Rth j-a Thermal Resistance, Junction to Ambient
MAX
0.7
40
UNIT
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




Inchange Semiconductor

IRFP250N Datasheet Preview

IRFP250N Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP250N
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 18A
IGSS Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 200V; VGS= 0
VSD Forward On-Voltage
IS= 18A; VGS= 0
MIN MAX UNIT
200 V
24V
0.075
Ω
±100
nA
25 μA
1.3 V
·
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark


Part Number IRFP250N
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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