Datasheet4U Logo Datasheet4U.com

IRFP241R - N-Channel MOSFET Transistor

Description

purpose applications.

Features

  • Drain Current.
  • ID= 20A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 200V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max).
  • Fast Switching.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFP2410 Fourth Generation MOSFET International Rectifier
IRFP240 Power MOSFET International Rectifier
IRFP240 N-Channel Power MOSFET Intersil Corporation
IRFP240 N-Channel Power MOSFET Fairchild Semiconductor
IRFP240 Power MOSFET Vishay Siliconix

Other Datasheets by Inchange Semiconductor

Part Number Description
IRFP240 N-Channel MOSFET Transistor
IRFP240A N-Channel MOSFET Transistor
IRFP240FI N-Channel MOSFET Transistor
IRFP240R N-Channel MOSFET Transistor
IRFP242R N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP241R FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±20 V V ID Drain Current-Continuous 20 A IDM Drain Current-Single Pluse 80 A PD Total Dissipation @TC=25℃ 150 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.
Published: |