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IRFP240 - N-Channel MOSFET Transistor

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General Description

·Designed for use in switch mode power supplies and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.

Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 200 V ±20 V 20 A 80 A 150 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient MAX 0.83 30 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor

Overview

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.

Key Features

  • Drain Current.
  • ID= 20A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 200V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max).
  • Fast Switching.

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