IRFBC30 transistor equivalent, to-220c n-channel mosfet transistor.
*Lower Input Capacitance
*Improved Gate Charge
*Extended Safe Operating Area
*Rugged Gate Oxide Technology
DESCRIPTION
*High current ,high speed swit.
*High current ,high speed switching
*Switch mode power supplies
*DC-AC converters for welding equipment and
Uninterruptible power supplies and motor Driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain.
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