IRF821 datasheet, transistor equivalent, Inchange Semiconductor

Features and benefits

*Lower Input Capacitance
*Improved Gate Charge
*Extended Safe Operating Area
*Rugged Gate Oxide Technology DESCRIPTION
*Designed for use in switch mo.

Application

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Co.

Description

*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 450 ±20 V V ID Drain Current-Cont.

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