*Low RDS(on) = 0.073Ω(TYP)
*Lower Input Capacitance
*Improved Gate Charge
*Extended Safe Operating Area
*Rugged Gate Oxide Technology DESCRIPTION

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous I.

*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current.

IRF650

IRF650B

IRF654

IRF654A

IRF654B

IRF60B217

IRF60DM206

IRF60R217

IRF610

IRF6100

IRF6100PBF

IRF610A

IRF610B

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