IRF150 transistor equivalent, n-channel mosfet transistor.
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Switching pow.
*Drain Current
–ID=40A@ TC=25℃
*Drain Source Voltage-
: VDSS= 100V(Min)
*Static Drain-Source On-Resistance
: RDS(on) =0.055Ω(Max)
*High Power,High Speed Applications
*Minimum Lot-to-Lot variations for robust device.
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