Datasheet4U Logo Datasheet4U.com

IRF123 - N-Channel MOSFET Transistor

General Description

Drain Current ID=7A@ TC=25℃ Drain Source Voltage- : VDSS= 60V(Min) Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) Nanosecond Switching Speeds APPLICATIONS Switching power supplies Motor controls,Inverters and Choppers Audio amplifiers and high energy pulse

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF123 N-Channel Power MOSFET Fairchild Semiconductor
IRF123 N-Channel Power MOSFET Samsung semiconductor
IRF123 N-Channel Power MOSFET Intersil Corporation
IRF120 N-CHANNEL POWER MOSFET Samsung semiconductor
IRF120 Power MOSFET Intersil Corporation

Other Datasheets by Inchange Semiconductor

Part Number Description
IRF120 N-Channel MOSFET Transistor
IRF121 N-Channel MOSFET Transistor
IRF122 N-Channel MOSFET Transistor
IRF130 N-Channel MOSFET Transistor
IRF132 N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF123 DESCRIPTION ·Drain Current ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) ·Nanosecond Switching Speeds APPLICATIONS ·Switching power supplies ·Motor controls,Inverters and Choppers ·Audio amplifiers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 60 ±20 V V Drain Current-continuous@ TC=25℃ 7 A Total Dissipation@TC=25℃ 40 W Max.