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IRF120 - N-Channel MOSFET Transistor

Description

Drain Current ID=8A@ TC=25℃ Drain Source Voltage- : VDSS= 100V(Min) Static Drain-Source On-Resistance : RDS(on) =0.3Ω(Max) Nanosecond Switching Speeds APPLICATIONS Switching power supplies Motor controls,Inverters and Choppers Audio amplifiers and high energy puls

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF120 DESCRIPTION ·Drain Current ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.3Ω(Max) ·Nanosecond Switching Speeds APPLICATIONS ·Switching power supplies ·Motor controls,Inverters and Choppers ·Audio amplifiers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 100 ±20 V V Drain Current-continuous@ TC=25℃ 8 A Total Dissipation@TC=25℃ 40 W Max.
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